Established in 2018, C4DFED is a premier institute-wide facility dedicated to the design, fabrication, and characterization of next-generation nano-electronics devices. We house a state-of-the-art Class 100 & Class 1000 cleanroom facility equipped with sophisticated lithography, deposition, etching, and characterization tools. By bridging the gap between theoretical physics, material science, and electrical engineering, we provide a platform for researchers and industry partners to translate “lab-scale” concepts into functional prototypes.

C4DFED operates at the frontier of high-impact technology through:

· Innovative Materials: Developing sub-10 nm extreme UV lithography photoresists and 2D layered semiconductors for next-generation electronics.

· Advanced Devices: Engineering high-performance FETs, non-volatile memory, optoelectronics, environmental sensors, flexible organic devices, power devices, and quantum computing junctions.

· Strategic Collaborations: Serving as a national mission hub that empowers startups and industry through fabrication, consultancy, and joint R&D.

· Capacity Building: Bridging the semiconductor skill gap via specialized curricula and intensive "hands-on" training workshops.

C4DFED drives high-impact research for global industry and national progress through strategic partnerships with government bodies like ISRO, ANRF, DAE-BRNS, and the INAE India-Taiwan program, alongside international industrial leaders such as EMD Merck, USA.